Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentration
We report room-temperature Raman scattering studies of nominally undoped (100) GaAs1−xBix epitaxial layers exhibiting Biinduced (p-type) longitudinal-optical-plasmon coupled (LOPC) modes for 0.018≤x≤0.048. Redshifts in the GaAs-like optical modes due to alloying are evaluated and are paralleled by s...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Optical Society of America
2014
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| Online Access: | http://eprints.nottingham.ac.uk/34557/ http://eprints.nottingham.ac.uk/34557/ http://eprints.nottingham.ac.uk/34557/ http://eprints.nottingham.ac.uk/34557/1/14_Steele.pdf |