DLTS characterisation of defects in III-V compound semiconductors grown by MBE
The interest in the growth of III-V compound semiconductors such as GaAs and AlGaAs on high index planes has increased tremendously over the last few years. The structural, optical and electrical properties III-V based structures are found to improve by, growing on (nil) planes. For example the amph...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2011
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| Online Access: | http://eprints.nottingham.ac.uk/14211/ http://eprints.nottingham.ac.uk/14211/1/555503.pdf |