Manipulating the magnetic anisotropy in the ferromagnetic semiconductor Gallium Manganese Arsenide
Since its first successful growth in 1996, the ferromagnetic semiconductor (Ga,Mn)- As has had a great inuence on the research field of semiconductor spintronics. Among the outstanding characteristics of this material the large spin-orbit interaction for the holes in the valence band plays a major r...
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| Format: | Thesis (University of Nottingham only) |
| Language: | English |
| Published: |
2012
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| Online Access: | http://eprints.nottingham.ac.uk/12748/ http://eprints.nottingham.ac.uk/12748/1/Manipulating_the_magnetic_anisotropy_in_the_ferromagnetic_semiconductor_Gallium_Manganese_Arsenide.pdf |