Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates
Microstructure of FeSe1-xTex thin films near the interface to CaF2 is investigated by means of transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDX). TEM observation at the initial crystal-growth stage reveals that marked lattice compression occurs along the in-plane dire...
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AIP Publishing LLC
2016-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4963646 |
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doaj-art-f3c0ff793d0f4c64bee2adb0aa6f698b2018-09-02T05:28:56ZengAIP Publishing LLCAIP Advances2158-32262016-09-0169095314095314-710.1063/1.4963646069609ADVOrigin of lattice compression of FeSe1-xTex thin films on CaF2 substratesI. Tsukada0A. Ichinose1F. Nabeshima2Y. Imai3A. Maeda4Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, JapanCentral Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, JapanDepartment of Basic Science, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, JapanDepartment of Basic Science, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, JapanDepartment of Basic Science, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, JapanMicrostructure of FeSe1-xTex thin films near the interface to CaF2 is investigated by means of transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDX). TEM observation at the initial crystal-growth stage reveals that marked lattice compression occurs along the in-plane direction in the films with Se-rich composition, while the a-axis length of FeTe remains as its original value of bulk crystal. Subsequent EDX analysis demonstrates substantial diffusion of Se into the CaF2 substrate. Such diffusion is not prominent for Te. Thus, the formation of Se-deficient layer at the initial growth stage on CaF2 is concluded to be the main reason of the lattice compression in FeSe1-xTex thin films.http://dx.doi.org/10.1063/1.4963646 |
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| language |
English |
| format |
Article |
| author |
I. Tsukada A. Ichinose F. Nabeshima Y. Imai A. Maeda |
| spellingShingle |
I. Tsukada A. Ichinose F. Nabeshima Y. Imai A. Maeda Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates AIP Advances |
| author_facet |
I. Tsukada A. Ichinose F. Nabeshima Y. Imai A. Maeda |
| author_sort |
I. Tsukada |
| title |
Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates |
| title_short |
Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates |
| title_full |
Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates |
| title_fullStr |
Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates |
| title_full_unstemmed |
Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates |
| title_sort |
origin of lattice compression of fese1-xtex thin films on caf2 substrates |
| publisher |
AIP Publishing LLC |
| series |
AIP Advances |
| issn |
2158-3226 |
| publishDate |
2016-09-01 |
| description |
Microstructure of FeSe1-xTex thin films near the interface to CaF2 is investigated by means of transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDX). TEM observation at the initial crystal-growth stage reveals that marked lattice compression occurs along the in-plane direction in the films with Se-rich composition, while the a-axis length of FeTe remains as its original value of bulk crystal. Subsequent EDX analysis demonstrates substantial diffusion of Se into the CaF2 substrate. Such diffusion is not prominent for Te. Thus, the formation of Se-deficient layer at the initial growth stage on CaF2 is concluded to be the main reason of the lattice compression in FeSe1-xTex thin films. |
| url |
http://dx.doi.org/10.1063/1.4963646 |
| _version_ |
1612656297071607808 |