Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

Micro-Raman investigations of InN-GaN core-shell nanowires on Si (111) substrate

The electron-phonon interactions in InN-GaN core-shell nanowires grown by plasma assisted- molecular beam epitaxy (MBE) on Si (111) substrate have been analysed using micro-Raman spectroscopic technique with the excitation wavelength of 633, 488 and 325 nm. The Raman scattering at 633 nm reveals the...

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Bibliographic Details
Main Authors: P. Sangeetha, K. Jeganathan, V. Ramakrishnan
Format: Article
Language:English
Published: AIP Publishing LLC 2013-06-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4811365

Internet

http://link.aip.org/link/doi/10.1063/1.4811365

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