Evaluation of the concentration of point defects in GaN

Evaluation of the concentration of point defects in GaN

Abstract Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undop...

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Bibliographic Details
Main Authors: M. A. Reshchikov, A. Usikov, H. Helava, Yu. Makarov, V. Prozheeva, I. Makkonen, F. Tuomisto, J. H. Leach, K. Udwary
Format: Article
Language:English
Published: Nature Publishing Group 2017-08-01
Series:Scientific Reports
Online Access:http://link.springer.com/article/10.1038/s41598-017-08570-1

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http://link.springer.com/article/10.1038/s41598-017-08570-1

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