Effects of humidity on performance of electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte
Electric-double-layer oxide-based thin-film transistors gated by nanogranular SiO2 solid electrolyte have been fabricated at room temperature. The effects of humidity on performances are investigated. At the relative humidity of 65 %, the measured capacitance is 10 μF/cm2, and the device shows Ion/o...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-07-01
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| Series: | AIP Advances |
| Online Access: | http://link.aip.org/link/doi/10.1063/1.4815970 |