Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
A drastic increase in the p-type carrier concentration and decrease in the activation energy of an acceptor are achieved by using a method of pulse supply of the source gases for AlGaN and GaN. This method offers a new way of producing a low-resistance p-AlGaN and p-GaN epitaxial layer.
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3698156 |