Heavily Si-doped InAs photoluminescence measurements

Heavily Si-doped InAs photoluminescence measurements

In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 1016 cm-3 to 2.93 × 1018 cm-3. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the...

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Bibliographic Details
Main Authors: Grodecki Kacper, Murawski Krzysztof, Henig Aleksandra, Michalczewski Krystian, Benyahia Djalal, Kubiszyn Łukasz, Martyniuk Piotr
Format: Article
Language:English
Published: Sciendo 2017-10-01
Series:Materials Science-Poland
Subjects:
In As
photoluminescence
Burstein-Moss
heavy doping
Online Access:http://www.degruyter.com/view/j/msp.2017.35.issue-3/msp-2017-0075/msp-2017-0075.xml?format=INT

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http://www.degruyter.com/view/j/msp.2017.35.issue-3/msp-2017-0075/msp-2017-0075.xml?format=INT

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