Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates
The electrical performance of MoS2 can be engineered by introducing high-κ dielectrics, while the interactions between high-κ dielectrics and MoS2 need to be studied. In this study, multilayer MoS2 field-effect transistors (FETs) with a back-gated configuration were fabricated on high-κ Al2O3 coated...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4919800 |