Thickness induced uniaxial anisotropy and unexpected four-fold symmetry in Co/SiO2/Si films
Co films with thickness ranging from 20 to 160 nm have been fabricated on SiO2/Si substrates by pulsed laser deposition method (PLD). It was found that that the Co crystal tends to have a structure of bulk hcp Co with the increase of the Co film thickness, and the coercivity of the Co film decreases...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5006504 |