Vacancies in GaN bulk and nanowires: effect of self-interaction corrections
We investigate gallium and nitrogen vacancies in gallium nitride (GaN) bulk and nanowires using self-interaction corrected pseudopotentials (SIC). In particular, we examine the band structures to compare and contrast differences between the SIC results and standard density functional theory (DFT) re...
| Main Authors: | , , |
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| Format: | Journal Article |
| Published: |
Institute of Physics Publishing Ltd.
2012
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| Online Access: | http://hdl.handle.net/20.500.11937/9627 |