In situ X-ray synchrotron study of organic semiconductor ultra-thin films growth
In this work we present an X-ray diffraction study of the early stages of growth of an organic semiconductor (sexithiophene, T-6) thin film prepared by high vacuum sublimation. Specular reflectometry and grazing incidence X-ray diffraction were used to monitor the formation of T-6 films on silicon o...
| Main Authors: | , , , , , |
|---|---|
| Format: | Journal Article |
| Published: |
Elsevier
2006
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/20.500.11937/11113 |