Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

by Wei, Wei, Qin, Zhixin, Fan, Shunfei, Li, Zhiwei, Shi, Kai, Zhu, Qinsheng, Zhang, Guoyi
Published 2012

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers

by He, Chenguang, Qin, Zhixin, Xu, Fujun, Hou, Mengjun, Zhang, Shan, Zhang, Lisheng, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Published 2015

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system

by He, Chenguang, Qin, Zhixin, Xu, Fujun, Zhang, Lisheng, Wang, Jiaming, Hou, Mengjun, Zhang, Shan, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Published 2016

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

by Zhang, Lisheng, Xu, Fujun, Wang, Jiaming, He, Chenguang, Guo, Weiwei, Wang, Mingxing, Sheng, Bowen, Lu, Lin, Qin, Zhixin, Wang, Xinqiang, Shen, Bo
Published 2016

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

by Cheng, Jianpeng, Yang, Xuelin, Sang, Ling, Guo, Lei, Zhang, Jie, Wang, Jiaming, He, Chenguang, Zhang, Lisheng, Wang, Maojun, Xu, Fujun, Tang, Ning, Qin, Zhixin, Wang, Xinqiang, Shen, Bo
Published 2016