Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

by Shih, Huan-Yu, Chu, Fu-Chuan, Das, Atanu, Lee, Chia-Yu, Chen, Ming-Jang, Lin, Ray-Ming
Published 2016

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

by Shih, Huan-Yu, Shiojiri, Makoto, Chen, Ching-Hsiang, Yu, Sheng-Fu, Ko, Chung-Ting, Yang, Jer-Ren, Lin, Ray-Ming, Chen, Miin-Jang
Published 2015

Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN-based LEDs

by You, Yao-Hong, Su, Vin-Cent, Ho, Ti-En, Lin, Bo-Wen, Lee, Ming-Lun, Das, Atanu, Hsu, Wen-Ching, Kuan, Chieh-Hsiung, Lin, Ray-Ming
Published 2014

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate

by Lee, Chia-Yu, Tzou, An-Jye, Lin, Bing-Cheng, Lan, Yu-Pin, Chiu, Ching-Hsueh, Chi, Gou-Chung, Chen, Chi-Hsiang, Kuo, Hao-Chung, Lin, Ray-Ming, Chang, Chun-Yen
Published 2014