Effect of modulation p-doping on the optical properties of quantum dot laser structure

by Hasbullah, Nurul Fadzlin, David, J. P. R., Mowbray, D. J.
Published 2010

Dark Current mechanisms in quantum dot laser structures

by Hasbullah, Nurul Fadzlin, David, J. P. R., Mowbray, D. J.
Published 2011

High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications

by Ker, P.J., Tan, C.H., David, J.P.R.
Published 2017

Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes

by Ker, P.J., David, J.P.R., Tan, C.H.
Published 2017

Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures

by Sanchez, A. M., Beanland, R., Hasbullah, Nurul Fadzlin, Hopkinson, M., David, J. P. R.
Published 2009

Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging

by Ker, P.J., Marshall, A.R.J., Tan, C.H., David, J.P.R.
Published 2017

Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

by Ker, P.J., Marshall, A.R.J., David, J.P.R., Tan, C.H.
Published 2017

High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

by Marshall, A.R.J., Ker, P.J., Krysa, A., David, J.P.R., Tan, C.H.
Published 2017

Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K

by Marshall, A.R.J., Vines, P., Ker, P.J., David, J.P.R., Tan, C.H.
Published 2017

Temperature dependence of leakage current in InAs avalanche photodiodes

by Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H.
Published 2017

InAs electron avalanche photodiodes with 580 GHz gain-bandwidth product

by Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H.
Published 2017