Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating

by Z. Q. Liu, Z. Huang, W. M. Lü, K. Gopinadhan, X. Wang, A. Annadi, T. Venkatesan, Ariando
Published 2012-03-01

Interplay between carrier and cationic defect concentration in ferromagnetism of anatase Ti1-xTaxO2 thin films

by A. Roy Barman, A. Annadi, K. Gopinadhan, W. M. Lú, Ariando, S. Dhar, T. Venkatesan
Published 2012-03-01

Tuning the conductivity threshold and carrier density of two-dimensional electron gas at oxide interfaces through interface engineering

by H. J. Harsan Ma, S. W. Zeng, A. Annadi, Z. Huang, T. Venkatesan, Ariando
Published 2015-08-01

Scaling of flat band potential and dielectric constant as a function of Ta concentration in Ta-TiO2 epitaxial films

by Y. L. Zhao, A. Roy Barman, S. Dhar, A. Annadi, M. Motapothula, Jinghao Wang, Haibin Su, M. Breese, T. Venkatesan, Q. Wang
Published 2011-06-01