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    Modelling, fabrication, and characterization of memristor for mitigating the sneak path current in a nano-crossbar memory array by M, Arya Lekshmi

    Published 2022
    “…Even though the experimental results of several one selector -one resistor (1S1R) are reported, physical/electrical mechanisms explaining the working of such device integrations are missing; hence the first part of this research work focuses on the analytical/electrical model of a selector device and selector -RRAM integrated device (1S1R) architecture to demonstrate the working of devices and to illustrate how effective is a selector switch in mitigating the sneak path current. The selector device chosen to model is a tri-layer Pt/Ta2O5/TaOx/TiO2/Pt stack with nonlinear characteristics. …”
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