Search Results - Radio Ga Ga

Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon by Shamsuddin, Siti Nur Atikah

“…This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. …”
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Gain investigation for commercial GaAs and SiGe HBT LNA's under electron irradiation by Youssouf, Abdouraouf S., Habaebi, Mohamed Hadi, Ibrahim, S.Noorjannah, Hasbullah, Nurul Fadzlin

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Sub 0.15dB Noise Figure Room Temperature GaAs LNA for Next Generation Radio Telescope by Witvers, R., Bij de Vaate, J, Woestenburg, E.

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Characteristics of p-Cu20/n-GaN Heterojunction Prepared via Reactive Radio Frequency Magnetron Sputtering by Ooi, P. K., Ng, S. S., Abdullah, M. J.

“…In this work, p-type cuprous oxide (Cu20) thin films were deposited on n-type gallium nitride (GaN) by radio frequency (RF) magnetron sputtering. …”
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Optical Characterization Of GaN Thin Film Grown On Si(111) By Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy. by L, S Chuah, Hassan, Z., Abu Hassan, H

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PA-MBE GaN-Based Optoelectronics on Silicon Substrates by Chuah , Lee Siang

“…Dalam penyelidikan ini, epitaksi alur molekul berbantukan plasma nitrogen frekuensi radio (RF) digunakan untuk menumbuhkan bahan galium nitrid (GaN) di atas substrat Si(111) dengan penggunaan aluminium nitrid (AlN) yang ditumbuhkan pada suhu tinggi sebagai lapisan penimbal. …”
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GLEAM: The GaLactic and Extragalactic All-Sky MWA Survey by Wayth, Randall, Lenc, E., Bell, M., Callingham, J., Dwarakanath, K., Franzen, T., For, B., Gaensler, B., Hancock, P., Hindson, L., Hurley-Walker, N., Jackson, C., Johnston-Hollitt, M., Kapinska, A., McKinley, B., Morgan, J., Offringa, A., Procopio, P., Staveley-Smith, L., Wu, C., Zheng, Q., Trott, C., Bernardi, G., Bowman, J., Briggs, F., Cappallo, R., Corey, B., Deshpande, A., Emrich, D., Goeke, R., Greenhill, L., Hazelton, B., Kaplan, D., Kasper, J., Kratzenberg, E., Lonsdale, C., Lynch, Mervyn, McWhirter, S., Mitchell, D., Morales, M., Morgan, E., Oberoi, D., Ord, S., Prabu, T., Rogers, A., Roshi, A., Shankar, N., Srivani, K., Subrahmanyan, R., Tingay, Steven, Waterson, M., Webster, R., Whitney, A., Williams, A., Williams, C.

“…GLEAM, the GaLactic and Extragalactic All-sky MWA survey, is a survey of the entire radio sky south of declination + 25° at frequencies between 72 and 231 MHz, made with the MWA using a drift scan method that makes efficient use of the MWA’s very large field-of-view. …”
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Remnant radio galaxies discovered in a multi-frequency survey by Quici, B., Hurley-Walker, Natasha, Seymour, Nick, Turner, Ross, Shabala, S.S., Huynh, M., Andernach, H., Kapińska, A.D., Collier, J.D., Johnston-Hollitt, Melanie, White, S.V., Prandoni, I., Galvin, Tim, Franzen, Thomas, Ishwara-Chandra, C.H., Bellstedt, S., Tingay, Steven, Gaensler, B.M., O'Brien, A., Rogers, J., Chow, K., Driver, S., Robotham, A.

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Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. by L, S Chuah, Hassan, Z, Abu Hassan, H

“…High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).…”
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DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application by Munir, Tariq

“…Among them the most important and critical factors are the reverse leakage current, series resistance, junction capacitance and thermal stability that limits Schottky diode performance on gallium nitride for Direct Current (DC) and Radio Frequency (RF) characteristics. To overcome these limitations we studied the influence of metal contact, contact area, thermal behavior and edge termination on DC and RF characteristics of n-GaN Schottky diode by simulation and fabrication approach.…”
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The low density and magnetization of a massive galaxy halo exposed by a fast radio burst by Prochaska, J.X., Macquart, Jean-Pierre, McQuinn, M., Simha, S., Shannon, Ryan, Day, C.K., Marnoch, L., Ryder, S., Deller, A., Bannister, K.W., Bhandari, S., Bordoloi, R., Bunton, J., Cho, H., Flynn, C., Mahony, E.K., Phillips, C., Qiu, H., Tejos, N.

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Spectral and morphological signatures of cluster merger shocks: CIZA J2242.8+5301 by Stroe, Andra, Weeren, Reinout J van, Sobral, David, Rumsey, Clare, Intema, Huib, Röttgering, Huub JA, Harwood, Jeremy J, Saunders, Richard, Brüggen, Marcus, Hoeft, Matthias

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The Host Galaxies and Progenitors of Fast Radio Bursts Localized with the Australian Square Kilometre Array Pathfinder by Bhandari, S., Sadler, E.M., Prochaska, J.X., Simha, S., Ryder, S.D., Marnoch, L., Bannister, K.W., Macquart, Jean-Pierre, Flynn, C., Shannon, Ryan, Tejos, N., Corro-Guerra, F., Day, C.K., Deller, A.T., Ekers, Ron, Lopez, S., Mahony, E.K., Nuñez, C., Phillips, C.

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Spectral variability of radio sources at low frequencies by Ross, Kat, Callingham, J.R., Hurley-Walker, Natasha, Seymour, Nick, Hancock, Paul, Franzen, Thomas, Morgan, John, White, S.V., Bell, M.E., Patil, P.

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A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices by Hussein, Asaad Shakir

“…Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. …”
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Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector by Kamarulzaman, Azharul Ariff

“…This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. …”
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Feasibility study of GaN-based MEMS capacitive microphone using finite element method by Rahmat Zaki Auliya, M. F. Mohd. Razip Wee, Subandi, Ayub, Muhammad Ramdzan Buyong, Burhanuddin Yeop Majlis

“…Gallium nitride (GaN) is an excellent choice of semiconductor material due to its optoelectronic, mechanical and wide bandgap properties which are highly demanded by high-power and radio-frequency (RF) electronics but also widely employed for the fabrication of Light Emitting Diode (LED). …”
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Simulations of ionospheric refraction on radio interferometric data by Chege, J Kariuki, Jordan, Chris, Lynch, Christene, Line, Jack, Trott, Cathryn

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Structural and Optical Properties of Ultra-high Pure Hot Water Processed Ga2O3 Thin Film by Subramani, Shanmugan, Devarajan, Mutharasu

“…The effect of moisture or environment on thin film properties has more influence on gas sensing properties. Radio Frequency sputtered Ga2O3 thin film was synthesized and processed in ultra-high pure hot water at 95 …”
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Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film by Hedei, Puteri Haslinda Megat Abdul, Hassan, Zainuriah, Hock, Jin Quah

“…In this work, the gallium oxide (Ga2O3) thin films were deposited on silicon substrate using radio frequency (RF) magnetron sputtering and these Ga2O3 thin films were subjected to post-deposition annealing in oxygen ambient at different temperatures of 400, 600, 800, and 1000℃ for 60 minutes. …”
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