Search Results - Down GAA

  • Showing 1 - 7 results of 7
Refine Results
  1. 1
    Non-equilibrium critical point in Be-doped low-temperature-grown GaAs

    Non-equilibrium critical point in Be-doped low-temperature-grown GaAs by Mohamed, Mohd Ambri, Pham, Tien Lam, N., Otsuka

    Published 2013
    “…We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. …”
    Get full text
    Get full text
  2. 2
    Gene expression profiling of mitochondrial oxidative phosphorylation (OXPHOS) complex I in Friedreich ataxia (FRDA) patients

    Gene expression profiling of mitochondrial oxidative phosphorylation (OXPHOS) complex I in Friedreich ataxia (FRDA) patients by Salehi, Mohammad Hossein, Kamalidehghan, Behnam, Houshmand, Massoud, Goh, Yong Meng, Sadeghizadeh, Majid, Aryani, Omid, Nafissi, Shahriar

    Published 2014
    “…Friedreich ataxia (FRDA) is the most frequent progressive autosomal recessive disorder associated with unstable expansion of GAA trinucleotide repeats in the first intron of the FXN gene, which encodes for the mitochondrial frataxin protein. …”
    Get full text
    Get full text
  3. 3
    Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode

    Surface morphology of In0.5Ga0.5 quantum dots grown using stranski-krastanov growth mode by Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Amira Saryati Ameruddin

    Published 2010
    “…The migration of groups III species in the growth of In0.5Ga0.5As/GaAs system was influenced by AsH3 flow during cooling-down period. …”
    Get full text
    Get full text
  4. 4
    Design of optimal nanoscale channel dimensions of FinFET based on constituent semiconductor materials

    Design of optimal nanoscale channel dimensions of FinFET based on constituent semiconductor materials by Ali, Ahmed Mahmood

    Published 2019
    “…The aim of this study is to design optimal Nano-dimensional channel of FinFET based on electrical characteristics and semiconductor material (Si GaAs Ge and InAs) to overcome dimensions shrunk down issues and ensure the best performance of FinFETs. …”
    Get full text
    Get full text
  5. 5
    Growth and structural characterisation of novel III-V semiconductor materials

    Growth and structural characterisation of novel III-V semiconductor materials by Hall, Jacqueline Lesley

    Published 2010
    “…Migration enhanced epitaxy was subsequently used to grow LT GaAs, resulting in single crystalline GaAs at growth temperatures down to 115C. …”
    Get full text
  6. 6
    Studies of III-V ferromagnetic semiconductors

    Studies of III-V ferromagnetic semiconductors by Wang, Mu

    Published 2012
    “…The experimental investigation shows that a (Ga,Mn)(As,P) single layer grown on GaAs substrate has perpendicular anisotropy easy axis after annealing. …”
    Get full text
  7. 7
    New Characterisation Techniques for Thin Film Antiferromagnetic Materials

    New Characterisation Techniques for Thin Film Antiferromagnetic Materials by Poole, S F

    Published 2023
    “…The vacuum chamber can be evacuated down to 10e-8 hPa using a readily available turbo pump. …”
    Get full text

Search Tools: