Search Results - "molecular beam epitaxy"

Investigation of Structural and Optical Properties of Dilute GaAsBi and InGaAsBi Semiconductor Nanostructures Grown by Molecular Beam Epitaxy by Alhassni, Amra

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Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy by Vuong, T.Q.P., Cassabois, G., Valvin, P., Rousseau, E., Summerfield, A., Mellor, C.J., Cho, Y., Cheng, T.S., Albar, J.D., Eaves, Laurence, Foxon, C.T., Beton, Peter H., Novikov, Sergei V., Gil, B.

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STRUCTURAL AND OPTICAL PROPERTIES OF GaAs1-xBix/AlyGa1-yAs QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY by Almunyif, Amjad

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Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE by Goff, Lucy Elizabeth

Subjects: “…MBE ; GaN ; Gallium Nitride ; Molecular Beam Epitaxy…”
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Investigation of structural, electrical and optical properties of doped dilute GaAsBi grown by molecular beam epitaxy by Alhassan, Sultan

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Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: electronic properties and band structure by Pierucci, Debora, Zribi, Jihene, Henck, Hugo, Chaste, Julien, Silly, Mathieu G., Bertran, François, Le Fevre, Patrick, Gil, Bernard, Summerfield, Alex, Beton, Peter H., Novikov, Sergei V., Cassabois, Guillaume, Rault, Julien E., Ouerghi, Abdelkarim

Subjects: “…Hexagonal Boron Nitride ; Van der Waals heterostructure ; Angle Resolved Photoemission Spectroscopy ; Molecular Beam Epitaxy…”
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Optoelectronic van der Waals heterostructure devices and the growth of C-doped hBN by MBE by James, Tyler S S

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Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source by Novikov, Sergei V., Staddon, Christopher R., Sahonta, S-L, Oliver, R.A., Humphreys, C.J., Foxon, C.T.

Subjects: “…Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials…”
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Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy by Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. Thomas, Fischer, A. M., Ponce, F. A., Haigh, S. J.

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Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources by Novikov, Sergei V., Foxon, C.T.

Subjects: “…A3. Molecular beam epitaxy; B1. Nitrides; A1. Doping; B2. Semiconducting III–V materials…”
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III-V semiconductor waveguides for photonic functionality at 780 nm by Maclean, Jessica O., Greenaway, Mark T., Campion, Richard P., Pyragius, Tadas, Fromhold, T. Mark, Kent, Anthony J., Mellor, Christopher J.

Subjects: “…Semiconductors ; Waveguides ; Chemical species ; Sensors ; Polarization ; Fabrication ; Molecular beam epitaxy ; Optical components ; Optical cooling ; Photonic integrated circuits…”
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Studies of self-assembled metal-organic nanostructures and the MBE growth of graphene by Summerfield, Alex

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