Search Results - "MOSFET"

Built-in reliability design of a high-frequency SiC MOSFET power module by Li, Jianfeng, Gurpinar, Emre, Lopez Arevalo, Saul, Castellazzi, Alberto, Mills, Liam

Subjects: “…SiC MOSFET…”
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Body diode reliability investigation of SiC power MOSFETs by Fayyaz, A., Romano, G., Castellazzi, Alberto

Subjects: “…Silicon carbide; Wide bandgap; Power MOSFET; Body diode; Reliability…”
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High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs by Garcia, Jorge, Gurpinar, Emre, Castellazzi, Alberto

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A physics-based compact model of SiC power MOSFETs by Kraus, Rainer, Castellazzi, Alberto

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UIS failure mechanism of SiC power MOSFETs by Fayyaz, Asad, Castellazzi, Alberto, Romano, Gianpaolo, Riccio, Michele, Urresti, J., Wright, Nick

Subjects: “…Silicon carbide; MOSFET; Avalanche breakdown; Avalanche ruggedness; Unclamped inductive switching…”
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Static and dynamic TSEPs of SiC and GaN transistors by Zhu, Siwei, Fayyaz, Asad, Castellazzi, Alberto

Subjects: “…SiC MOSFET…”
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Performance and robustness characterisation of SiC power MOSFETs by Fayyaz, Asad

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Influence of gate bias on the avalanche ruggedness of SiC power MOSFETs by Fayyaz, Asad, Castellazzi, Alberto, Romano, G., Riccio, M., Urresti, J., Wright, N.

Subjects: “…avalanche ruggeddness; silicon carbide; unclamped inductive swithching; power MOSFET; robustness…”
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Next generation integrated drive: a novel thermal and electrical integration technique for high power density converters used in automotive drive systems by Ahmadi, Behzad, Espina, Jordi, De Lillo, Liliana, Abebe, Robert, Empringham, Lee, Johnson, Christopher Mark

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Electrical performance and reliability characterization of a SiC MOSFET power module with embedded decoupling capacitors by Yang, Li, Li, Ke, Dai, Jingru, Corfield, Martin, Harris, Anne, Paciura, Krzysztof, O'Brien, John, Johnson, C. Mark

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Experimental efficiency comparison between a direct matrix converter and an indirect matrix converter based on efficiency using Si IGBT and SiC MOSFETs by Trentin, Andrew, Liliana de Lillio, Liliana, Empringham, Lee, Zanchetta, Pericle, Wheeler, Patrick, Clare, Jon C.

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Transient out-of-SOA robustness of SiC power MOSFETs by Castellazzi, Alberto, Fayyaz, Asad, Romano, Gianpaolo, Riccio, Michele, Irace, Andrea, Urresti-Ibanez, Jesus, Wright, Nick

Subjects: “…Power MOSFET…”
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Novel current-limiting strategy for solid-state circuit breakers (SSCB) without additional impedance by Gu, Chunyang, Effah, Francis Boafo, Castellazzi, Alberto, Watson, Alan James, Wheeler, Patrick

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Design and development of a high-density, high-speed 10 kV SiC MOSFET module by Di Marino, Christina, Boroyevich, Dushan, Burgos, Rolando, Johnson, Christopher Mark, Lu, G.-Q.

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Using multi time-scale electro-thermal simulation approach to evaluate SiC-MOSFET power C=converter in virtual prototyping design tool by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…Virtual prototyping; Multi time-scale; Electro-thermal simulation; SiC-MOSFET; Parasitic inductance; Switching losses…”
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Experimental and analytical performance evaluation of SiC power devices in the matrix converter by Safari, Saeed, Castellazzi, Alberto, Wheeler, Patrick

Subjects: “…Normally-off SiC JFET; SiC MOSFET; SiC BJT; power losses evaluation; matrix converter…”
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Wide-bandgap semiconductor based power converters for renewable energy systems by Gurpinar, Emre

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SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…Wide bandgap power semiconductor device; GaN-HEMT; SiC-MOSFET; Switching energy; Hard switching; Soft switching…”
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SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…Wide bandgap power semiconductor device; GaN-HEMT; SiC-JFET; SiC-MOSFET; Conduction loss; Switching loss…”
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SiC power MOSFETs performance, robustness and technology maturity by Castellazzi, Alberto, Fayyaz, Asad, Romano, G., Yang, Li, Riccio, M., Irace, A.

Subjects: “…Silicon Carbide (SiC); power MOSFETs; reliability; robustness…”
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