Search Results - "HEMT"

GaN HEMT gate-driver for achieving high power converter integration levels by Wu, H, Garcia, J., Castellazzi, A.

Subjects: “…GaN HEMT…”
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Static and dynamic TSEPs of SiC and GaN transistors by Zhu, Siwei, Fayyaz, Asad, Castellazzi, Alberto

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Individual device active cooling for enhanced system-level power density and more uniform temperature distribution by Zeng, Y., Hussein, A., Castellazzi, A.

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Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT by Oeder, Thorsten, Castellazzi, Alberto, Pfost, Martin

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Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter by Zeng, Y., Gurpinar, Emre, Hussein, A., Castellazzi, Alberto

Subjects: “…GaN HEMT…”
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GaN-HEMT dynamic ON-state resistance characterisation and modelling by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model…”
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Wide-bandgap semiconductor based power converters for renewable energy systems by Gurpinar, Emre

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Characterisation and modelling of gallium nitride power semiconductor devices dynamic on-state resistance by Li, Ke, Evans, Paul, Johnson, Mark

Subjects: “…GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Equivalent circuit…”
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High-frequency power conversion for photovoltaic module applications by Sergentanis, Grigorios

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Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures by Kocan, M., Umana-Membreno, G., Kilburn, M., Fletcher, Ian, Recht, F., McCarthy, L., Mishra, U., Nener, B., Parish, G.

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SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…Wide bandgap power semiconductor device; GaN-HEMT; SiC-MOSFET; Switching energy; Hard switching; Soft switching…”
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SiC/GaN power semiconductor devices theoretical comparison and experimental evaluation by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…Wide bandgap power semiconductor device; GaN-HEMT; SiC-JFET; SiC-MOSFET; Conduction loss; Switching loss…”
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Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on-state resistance by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…gallium nitride high-electron-mobility transistors (GaN-HEMT)…”
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Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter by Gurpinar, Emre, Castellazzi, Alberto, Iannuzzo, Francesco, Yang, Yongheng, Blaabjerg, Frede

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Electrical and thermal failure modes of 600 V p-gate GaN HEMTs by Oeder, Thorsten, Castellazzi, Alberto, Pfost, Martin

Subjects: “…High electron mobility transistor (HEMT)…”
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Trade-off study of heat sink and output filter volume in a GaN HEMT based single phase inverter by Gurpinar, Emre, Castellazzi, Alberto

Subjects: “…Wide bandgap (WBG) power devices; Gallium-nitride (GaN); HEMT; Three-level active neutral point clamped (3L-ANPC) converter; Photovoltaic (PV) systems…”
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Tradeoff study of heat sink and output filter volume in a GaN HEMT based single-phase inverter by Gurpinar, Emre, Castellazzi, Alberto

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Design of low inductance switching power cell for GaN HEMT based inverter by Gurpinar, Emre, Iannuzzo, Francesco, Yang, Yongheng, Castellazzi, Alberto, Blaabjerg, Frede

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Reliability-driven assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV inverters by Gurpinar, Emre, Yang, Yongheng, Iannuzzo, Francesco, Castellazzi, Alberto, Blaabjerg, Frede

Subjects: “…Wide bandgap (WBG) power devices; galliumnitride (GaN); photovoltaic (PV) systems; reliability; thermal loading analysis; three-level active neutral point clamped (3L-ANPC) converter; Gallium nitride; HEMTs; Inverters; MODFETs; Silicon; Silicon carbide…”
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