Search Results - "GaN"

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN by Fay, Mike W., Moldovan, Grigore, Harrison, Ian, Balmer, R.S., Soley, D.E.J., Hilton, K.P., Hughes, B.T., Uren, M.J., Martin, T., Brown, Paul D.

Subjects: Get full text

EBIC study of Au / n-type GaN Schottky contacts by Moldovan, Grigore, Harrison, Ian, Brown, Paul D.

Subjects: Get full text

GaN HEMT gate-driver for achieving high power converter integration levels by Wu, H, Garcia, J., Castellazzi, A.

Subjects: “…GaN HEMT…”
Get full text

Biocompatibility of semiconducting AlGaN/GaN material with living cells by Podolska, Anna, Tham, S., Hart, Robert, Seeber, R., Kocan, M., Kocan, M., Mishra, U., Pfleger, K., Parish, G., Nener, B.

Subjects: Get full text

Correlation of electrical and structural properties of Au contacts to KOH treated n-GaN by Moldovan, Grigore, Harrison, Ian, Roe, Martin, Brown, Paul D.

Subjects: “…I-V EBIC XPS GaN…”
Get full text

Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN by Fay, Mike W., Harrison, Ian, Birbeck, J.C., Hughes, B.T., Uren, M.J., Martin, T., Brown, Paul D.

Subjects: Get full text

High-frequency power conversion for photovoltaic module applications by Sergentanis, Grigorios

Subjects: Get full text

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures by Kocan, M., Umana-Membreno, G., Kilburn, M., Fletcher, Ian, Recht, F., McCarthy, L., Mishra, U., Nener, B., Parish, G.

Subjects: Get full text

TEM assessment of As-doped GaN epitaxial layers grown on sapphire by Fay, Mike W., Harrison, Ian, Larkins, Eric C., Novikov, Sergei V., Foxon, C.T., Brown, Paul D.

Subjects: “…EELS TEM GaN Epitaxy Doping PAMBE…”
Get full text

Investigation of deep level defects in advanced semiconductor materials and devices by AL Saqri, Noor alhuda Ahmed

Subjects: Get full text

Growth and characterisation of III-V semiconductor materials grown primarily by AME and PA-MBE by Goff, Lucy Elizabeth

Subjects: “…MBE ; GaN ; Gallium Nitride ; Molecular Beam Epitaxy…”
Get full text

Static and dynamic TSEPs of SiC and GaN transistors by Zhu, Siwei, Fayyaz, Asad, Castellazzi, Alberto

Subjects: Get full text

Individual device active cooling for enhanced system-level power density and more uniform temperature distribution by Zeng, Y., Hussein, A., Castellazzi, A.

Subjects: Get full text

Coupling of Pyro–Piezo-Phototronic Effects in a GaN Nanowire by Qin, G., Wang, Z., Wang, L., Yang, K., Zhao, M., Lu, Chunsheng

Subjects: “…GaN nanowires…”
Get full text

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties by Yang, K., Qin, G., Wang, L., Zhao, M., Lu, Chunsheng

Subjects: “…GaN nanowires…”
Get full text

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes by Qian, H., Lee, K.B., Vajargah, S.Hosseini, Novikov, S.V., Guiney, I., Zhang, S., Zaidi, Z.H., Jiang, S., Wallis, D.J., Foxon, C.T., Humphreys, C.J., Houston, P.A.

Subjects: “…GaN…”
Get full text

Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT by Oeder, Thorsten, Castellazzi, Alberto, Pfost, Martin

Subjects: Get full text

Experimental demonstration of an optimised PWM scheme for more even device electro-thermal stress in a 3-Level ANPC GaN inverter by Zeng, Y., Gurpinar, Emre, Hussein, A., Castellazzi, Alberto

Subjects: “…GaN HEMT…”
Get full text

Microstructural characterisation of GaMnN ferromagnetic semiconductors grown on (001) oriented GaAs substrates by plasma assisted molecular beam epitaxy by Han, Yisong

Subjects: Get full text

GaN-HEMT dynamic ON-state resistance characterisation and modelling by Li, Ke, Evans, Paul, Johnson, Christopher Mark

Subjects: “…GaN-HEMT; Dynamic ON-state resistance; Power semiconductor device characterisation; Power semiconductor device modelling; Behavioural model…”
Get full text