Low temperature heteroepitaxial growth of 3C-SiC on silicon substrates by triode plasma chemical vapor deposition using dimethylsilane

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Low temperature heteroepitaxial growth of 3C-SiC on silicon substrates by triode plasma chemical vapor deposition using dimethylsilane

The investigation of the dependence of the cubic silicon carbide (3C-SiC) film characteristics on the reaction pressures, growth temperatures and hydrogen dilution rates was carried out by rapid thermal triode plasma CVD using dimethylsilane as a source gas. The stoichiometric 3C-SiC films with good...

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Bibliographic Details
Main Authors:	Hashim, Abdul Manaf, Yasui, K.
Format:	Article
Published:	Science Alert 2008
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/8958/

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