Hashim, A. M., & Yasui, K. (2008). Low temperature heteroepitaxial growth of 3C-SiC on silicon substrates by triode plasma chemical vapor deposition using dimethylsilane. Science Alert.
Chicago Style (17th ed.) CitationHashim, Abdul Manaf, and K. Yasui. Low Temperature Heteroepitaxial Growth of 3C-SiC on Silicon Substrates by Triode Plasma Chemical Vapor Deposition Using Dimethylsilane. Science Alert, 2008.
MLA (9th ed.) CitationHashim, Abdul Manaf, and K. Yasui. Low Temperature Heteroepitaxial Growth of 3C-SiC on Silicon Substrates by Triode Plasma Chemical Vapor Deposition Using Dimethylsilane. Science Alert, 2008.
Warning: These citations may not always be 100% accurate.