Growth parameters of InAs/GaAs quantum dots grown by MOVPE

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Growth parameters of InAs/GaAs quantum dots grown by MOVPE

Quantum dots are zero dimensional structures and therefore have superior transport and optical properties compared to either 2-dimensional or 3-dimensional structures. Quantum dots show promise for use in diode lasers, amplifiers, and biological sensors. They are also vigorously researched for us...

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Bibliographic Details
Main Authors:	Roslan, Sharizar, Othaman, Zulkafli, Muhammad, Rosnita, Lim, Kheng Boo
Format:	Article
Language:	English
Published:	Faculty of Science, University Teknologi Malaysia 2006
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/8953/ http://eprints.utm.my/8953/1/ShahrizarRoslan2006_GrowthParametersOfInasGaasQuantum.pdf

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