Enhancement of nano-RC switching delay due to the resistance blow-up in ingaas

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Enhancement of nano-RC switching delay due to the resistance blow-up in ingaas

RC and transit-time delays in a nanocircuit, where the resistor is a few nanometers in length, are evaluated taking into account the velocity and current saturation and applied to RC switching delay in InGaAs heterojunction field effect transistor (HFET). Transit time delay is the dominant factor in...

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Bibliographic Details
Main Authors:	Ismail, Razali, Tan, Michael L. P., Saad, Ismail
Format:	Article
Published:	World Scientific Publishing, Singapore 2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/8652/

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