Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)

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Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)

Characterization of a metal-oxide-semiconductor field effect transistor (MOSFET)incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE) was demonstrated by using numerical simulation. The DP was incorporated between the channel and source/drain of planar MOSFET and was sca...

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Bibliographic Details
Main Authors:	M. N., Zul Atfyi Fauzan, Saad, Ismail, Ismail, Razali
Format:	Article
Language:	English
Published:	Malaysian Solid State Science and Technology Society 2008
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/8612/ http://eprints.utm.my/8612/1/ZAFauzan2008-Scaling_And_Numerical_Simulation_Analysis.pdf

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