A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor

A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra's standard 0.18-µm CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout si...

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Main Authors: A'ain, Abu Khari, Ler, Chun Lee, Kordesch, Albert Victor
Format: Conference or Workshop Item
Published: 2006
Subjects:
Online Access:http://eprints.utm.my/8100/
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author A'ain, Abu Khari
Ler, Chun Lee
Kordesch, Albert Victor
author_facet A'ain, Abu Khari
Ler, Chun Lee
Kordesch, Albert Victor
author_sort A'ain, Abu Khari
building UTeM Institutional Repository
collection Online Access
description A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra's standard 0.18-µm CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout simulation results show the proposed IR LNA exhibits S21 of 27dB, S11 of-23.5dB, 2.2dB noise figure (NF) and input 1-dB compression point of-26dBm at 2.4-GHz. The IR of the IR LNA is -28dB and the tuning range for the IR notch filter is from 1.08 to 1.14-GHz. The first-stage of IR LNA dissipates not more than 10mw, including biasing circuit. The die area occupied by IR LNA is 0.49 mm2, excluding GSG pads
first_indexed 2025-11-15T21:00:48Z
format Conference or Workshop Item
id utm-8100
institution Universiti Teknologi Malaysia
institution_category Local University
last_indexed 2025-11-15T21:00:48Z
publishDate 2006
recordtype eprints
repository_type Digital Repository
spelling utm-81002017-08-24T03:11:42Z http://eprints.utm.my/8100/ A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor A'ain, Abu Khari Ler, Chun Lee Kordesch, Albert Victor TK Electrical engineering. Electronics Nuclear engineering A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra's standard 0.18-µm CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout simulation results show the proposed IR LNA exhibits S21 of 27dB, S11 of-23.5dB, 2.2dB noise figure (NF) and input 1-dB compression point of-26dBm at 2.4-GHz. The IR of the IR LNA is -28dB and the tuning range for the IR notch filter is from 1.08 to 1.14-GHz. The first-stage of IR LNA dissipates not more than 10mw, including biasing circuit. The die area occupied by IR LNA is 0.49 mm2, excluding GSG pads 2006 Conference or Workshop Item PeerReviewed A'ain, Abu Khari and Ler, Chun Lee and Kordesch, Albert Victor (2006) A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor. In: IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS. http://dx.doi.org/10.1109/APCCAS.2006.342107
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
A'ain, Abu Khari
Ler, Chun Lee
Kordesch, Albert Victor
A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
title A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
title_full A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
title_fullStr A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
title_full_unstemmed A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
title_short A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
title_sort 2.4 ghz cmos tunable image-rejection low-noise amplifier with active inductor
topic TK Electrical engineering. Electronics Nuclear engineering
url http://eprints.utm.my/8100/
http://eprints.utm.my/8100/