A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra's standard 0.18-µm CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout si...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2006
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| Online Access: | http://eprints.utm.my/8100/ |
| _version_ | 1848891616457129984 |
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| author | A'ain, Abu Khari Ler, Chun Lee Kordesch, Albert Victor |
| author_facet | A'ain, Abu Khari Ler, Chun Lee Kordesch, Albert Victor |
| author_sort | A'ain, Abu Khari |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra's standard 0.18-µm CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout simulation results show the proposed IR LNA exhibits S21 of 27dB, S11 of-23.5dB, 2.2dB noise figure (NF) and input 1-dB compression point of-26dBm at 2.4-GHz. The IR of the IR LNA is -28dB and the tuning range for the IR notch filter is from 1.08 to 1.14-GHz. The first-stage of IR LNA dissipates not more than 10mw, including biasing circuit. The die area occupied by IR LNA is 0.49 mm2, excluding GSG pads |
| first_indexed | 2025-11-15T21:00:48Z |
| format | Conference or Workshop Item |
| id | utm-8100 |
| institution | Universiti Teknologi Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-15T21:00:48Z |
| publishDate | 2006 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utm-81002017-08-24T03:11:42Z http://eprints.utm.my/8100/ A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor A'ain, Abu Khari Ler, Chun Lee Kordesch, Albert Victor TK Electrical engineering. Electronics Nuclear engineering A 2.4-GHz CMOS fully-integrated tunable image-rejection (IR) low-noise amplifier (LNA) has been designed using Silterra's standard 0.18-µm CMOS process. The IR notch filter is designed using active inductor without using any passive inductor. With an image frequency of 1.34-GHz, post layout simulation results show the proposed IR LNA exhibits S21 of 27dB, S11 of-23.5dB, 2.2dB noise figure (NF) and input 1-dB compression point of-26dBm at 2.4-GHz. The IR of the IR LNA is -28dB and the tuning range for the IR notch filter is from 1.08 to 1.14-GHz. The first-stage of IR LNA dissipates not more than 10mw, including biasing circuit. The die area occupied by IR LNA is 0.49 mm2, excluding GSG pads 2006 Conference or Workshop Item PeerReviewed A'ain, Abu Khari and Ler, Chun Lee and Kordesch, Albert Victor (2006) A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor. In: IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS. http://dx.doi.org/10.1109/APCCAS.2006.342107 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering A'ain, Abu Khari Ler, Chun Lee Kordesch, Albert Victor A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor |
| title | A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
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| title_full | A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
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| title_fullStr | A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
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| title_full_unstemmed | A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
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| title_short | A 2.4 GHz CMOS tunable image-rejection low-noise amplifier with active inductor
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| title_sort | 2.4 ghz cmos tunable image-rejection low-noise amplifier with active inductor |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/8100/ http://eprints.utm.my/8100/ |