Modelling of nanoscale MOSFET performance in the velocity saturation region

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Modelling of nanoscale MOSFET performance in the velocity saturation region

Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a funct...

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Bibliographic Details
Main Authors:	Tan, Micheal Loong Peng, Ismail, Razali
Format:	Article
Language:	English English
Published:	Faculty of Electrical Engineering 2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/8071/ http://eprints.utm.my/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf http://eprints.utm.my/8071/3/paper7june07_michael_tan.pdf

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