Characterization of 50 nm MOSFET with dielectric pocket

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Characterization of 50 nm MOSFET with dielectric pocket

Characterizat ion of a metal-oxide-semi conductor field effect tran sistor incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE ) is demonstrated by using 2D numerical simulation. An analysis of 120 nm and 50 nm channel length (LJ wit h DP incorp orated between the chann...

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Bibliographic Details
Main Authors:	Fauzan, Zul Atfyi, Saad, Ismail, Ismail, Razali
Format:	Article
Language:	English
Published:	Malaysian Institute of Physics 2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering QC Physics
Online Access:	http://eprints.utm.my/8046/ http://eprints.utm.my/8046/2/%5B093-098%5D-zul.pdf

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