Hashim, A. M., & Yasui, K. (2006). Low temperature heteroepitaxial growth of 3C-SiC on Si substrates by rapid thermal triode plasma CVD using dimethylsilane.
Chicago Style (17th ed.) CitationHashim, Abdul Manaf, and Kanji Yasui. Low Temperature Heteroepitaxial Growth of 3C-SiC on Si Substrates by Rapid Thermal Triode Plasma CVD Using Dimethylsilane. 2006.
MLA (9th ed.) CitationHashim, Abdul Manaf, and Kanji Yasui. Low Temperature Heteroepitaxial Growth of 3C-SiC on Si Substrates by Rapid Thermal Triode Plasma CVD Using Dimethylsilane. 2006.
Warning: These citations may not always be 100% accurate.