Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier

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Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier

Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I-V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was im...

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Bibliographic Details
Main Authors:	Hashim, Abdul Manaf, Kasai , Seiya, Iizuki, Kouichi, Hashizume, Tamotsu, Hasegawa, Hideki
Format:	Article
Published:	Elsevier 2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7627/

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