Integration of interdigital-gated plasma wave device for proximity communication system application

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Integration of interdigital-gated plasma wave device for proximity communication system application

Interdigital-gated AlGaAs/GaAs high-electron-mobility transistor (HEMT) structure was used to investigate the interaction between the drifting carrier plasma waves and electromagnetic (EM) waves. It was shown theoretically that the interaction in the range from microwave to terahertz (THz) at room t...

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Bibliographic Details
Main Authors:	Hashim, Abdul Manaf, Kasai, Seiya, Hashizume, Tamotsu, Hasegawa, Hideki
Format:	Article
Published:	Elsevier 2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7625/

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