The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor

The hydrogen sensing characteristics of undoped-AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen...

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Main Authors: Mohamad, Mazuina, Fong, Yee Meng, Hashim, Abdul Manaf
Format: Conference or Workshop Item
Language:English
Published: 2008
Subjects:
Online Access:http://eprints.utm.my/7617/
http://eprints.utm.my/7617/1/Hashim_Abdul_Manaf_2008_Sensing_Performance_Undoped-AlGaNGaNSapphire_HEMT.pdf
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author Mohamad, Mazuina
Fong, Yee Meng
Hashim, Abdul Manaf
author_facet Mohamad, Mazuina
Fong, Yee Meng
Hashim, Abdul Manaf
author_sort Mohamad, Mazuina
building UTeM Institutional Repository
collection Online Access
description The hydrogen sensing characteristics of undoped-AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen or without ambient gas (vacuum) at pressure in the range of 50 Torr to 200 Torr was used for both types of ambient gases. The sensing characteristics at different hydrogen concentration are investigated. The sensitivity to hydrogen gas was also investigated in dependence of various catalytic metals thickness and operating temperatures.
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format Conference or Workshop Item
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institution Universiti Teknologi Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T20:59:01Z
publishDate 2008
recordtype eprints
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spelling utm-76172017-10-09T07:33:43Z http://eprints.utm.my/7617/ The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor Mohamad, Mazuina Fong, Yee Meng Hashim, Abdul Manaf TK Electrical engineering. Electronics Nuclear engineering The hydrogen sensing characteristics of undoped-AlGaN/GaN/sapphire circular Schottky diodes are systematically studied and compared over wide hydrogen concentration and temperature ranges. High purity hydrogen gas was exposed to the sample together with the ambient gas of either air or pure nitrogen or without ambient gas (vacuum) at pressure in the range of 50 Torr to 200 Torr was used for both types of ambient gases. The sensing characteristics at different hydrogen concentration are investigated. The sensitivity to hydrogen gas was also investigated in dependence of various catalytic metals thickness and operating temperatures. 2008 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/7617/1/Hashim_Abdul_Manaf_2008_Sensing_Performance_Undoped-AlGaNGaNSapphire_HEMT.pdf Mohamad, Mazuina and Fong, Yee Meng and Hashim, Abdul Manaf (2008) The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor. In: Proceedings- 2nd Asia International on Modelling and Simulation,AMS 2008, 13-15 May 2008. http://dx.doi.org/10.1109/AMS.2008.184
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Mohamad, Mazuina
Fong, Yee Meng
Hashim, Abdul Manaf
The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
title The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
title_full The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
title_fullStr The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
title_full_unstemmed The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
title_short The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
title_sort sensing performance of undoped-algan/gan/sapphire hemt hydrogen gas sensor
topic TK Electrical engineering. Electronics Nuclear engineering
url http://eprints.utm.my/7617/
http://eprints.utm.my/7617/
http://eprints.utm.my/7617/1/Hashim_Abdul_Manaf_2008_Sensing_Performance_Undoped-AlGaNGaNSapphire_HEMT.pdf