Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method

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Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method

A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel lengt...

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Bibliographic Details
Main Authors:	Saad, Ismail, Ismail, Razali
Format:	Article
Language:	English
Published:	Elsevier 2008
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7517/ http://eprints.utm.my/7517/1/Razali_Ismail_2008_Self-aligned_Verticaldouble-gateMOSFET.pdf

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