Comparison analysis on scaling the vertical and lateral NMOSFET in nanometer regime

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Comparison analysis on scaling the vertical and lateral NMOSFET in nanometer regime

Conventional lateral and vertical n-channel MOS transistors with channel length in the range of 100 nm to 50 nm have been systematically investigated by means of device simulation. The comparison analysis includes critical parameters that govern device performance. Threshold voltage VT roll-off, lea...

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Bibliographic Details
Main Authors:	Saad, Ismail, Sulaiman, Ima, Ismail, Razali
Format:	Article
Language:	English
Published:	UKM 2008
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7507/ http://eprints.utm.my/7507/3/RazaliIsmail2008_ComparisonAnalysisonScaling.pdf

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