Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

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Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity...

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Bibliographic Details
Main Authors:	Arora, Vijay K., Tan, Michael L. P., Saad, Ismail, Ismail, Razali
Format:	Article
Published:	American Institute of Physics 2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7500/

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