Design and simulation of a high performance lateral BJTs on TFSOI

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Design and simulation of a high performance lateral BJTs on TFSOI

Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high...

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Bibliographic Details
Main Authors:	Saad, Ismail, Ismail, Razali
Format:	Conference or Workshop Item
Language:	English
Published:	2006
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7499/ http://eprints.utm.my/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf

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