Design and simulation of a high performance lateral BJTs on TFSOI
Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7499/ http://eprints.utm.my/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf |
| _version_ | 1848891479790977024 |
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| author | Saad, Ismail Ismail, Razali |
| author_facet | Saad, Ismail Ismail, Razali |
| author_sort | Saad, Ismail |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 1017 cm-3, 1.0 times 1017 cm-3, 5 times 1020 cm-3 and 3 times 1020 cm-3 respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz fmax was successfully achieved at VBE=0.7 V, VCE=2.0 V and ICE=6.0 muA. |
| first_indexed | 2025-11-15T20:58:38Z |
| format | Conference or Workshop Item |
| id | utm-7499 |
| institution | Universiti Teknologi Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T20:58:38Z |
| publishDate | 2006 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utm-74992010-06-01T15:52:53Z http://eprints.utm.my/7499/ Design and simulation of a high performance lateral BJTs on TFSOI Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering Lateral BJT's have received renewed interest with the advent of BiCMOS and Silicon on Insulator (SOI) technology. It's been reported in [1] that a 67 GHz fmax novel lateral BJT's on TFSOI has been fabricated with a simplified process. This paper presents an investigation of this high performance transistor by using 2D process and device numerical simulation. Accurate geometrical structure and reasonably good doping profiles with a simple fabrication process are successfully achieved in the process simulation. However, a careful attention is required to define the mesh for the device to obtain an accurate measurement of device characteristics. With a base, low-doped collector, emitter and high-doped collector concentrations of 3 times 1017 cm-3, 1.0 times 1017 cm-3, 5 times 1020 cm-3 and 3 times 1020 cm-3 respectively, a variation of 0.1-0.13 mum base width is observed. I-V and frequency performance of these transistors are simulated and analyzed. Y-parameter measurement at frequency 10 MHz - 1000 GHz shows a 21 GHz fmax was successfully achieved at VBE=0.7 V, VCE=2.0 V and ICE=6.0 muA. 2006-12 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf Saad, Ismail and Ismail, Razali (2006) Design and simulation of a high performance lateral BJTs on TFSOI. In: Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference, 29 Oct 2006-1 Dec 2006, Kuala Lumpur, Malaysia. http://dx.doi.org/10.1109/SMELEC.2006.380692 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Saad, Ismail Ismail, Razali Design and simulation of a high performance lateral BJTs on TFSOI |
| title | Design and simulation of a high performance lateral BJTs on TFSOI |
| title_full | Design and simulation of a high performance lateral BJTs on TFSOI |
| title_fullStr | Design and simulation of a high performance lateral BJTs on TFSOI |
| title_full_unstemmed | Design and simulation of a high performance lateral BJTs on TFSOI |
| title_short | Design and simulation of a high performance lateral BJTs on TFSOI |
| title_sort | design and simulation of a high performance lateral bjts on tfsoi |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7499/ http://eprints.utm.my/7499/ http://eprints.utm.my/7499/1/Razali_Ismail_2006_Design_and_Simulation_of_a_High.pdf |