Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)

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Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)

The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and...

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Bibliographic Details
Main Authors:	Saad, Ismail, Ismail, Razali
Format:	Conference or Workshop Item
Language:	English
Published:	2006
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7497/ http://eprints.utm.my/7497/1/Razali_Ismail_2006_Design_and_Simulation_of_50_nm.pdf

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