Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)
The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.utm.my/7497/ http://eprints.utm.my/7497/1/Razali_Ismail_2006_Design_and_Simulation_of_50_nm.pdf |
| _version_ | 1848891479474307072 |
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| author | Saad, Ismail Ismail, Razali |
| author_facet | Saad, Ismail Ismail, Razali |
| author_sort | Saad, Ismail |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and a low off-state leakage current IOFF of 2 pA/mum was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubVT = 89 mV/decade and threshold voltage VT = 0.56 V. The analysis of body doping effects for SCE optimization and drive current trade-off was also done for an overall investigation and limit of the VDGM. |
| first_indexed | 2025-11-15T20:58:37Z |
| format | Conference or Workshop Item |
| id | utm-7497 |
| institution | Universiti Teknologi Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T20:58:37Z |
| publishDate | 2006 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utm-74972010-06-01T15:52:52Z http://eprints.utm.my/7497/ Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) Saad, Ismail Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The paper demonstrate the design and simulation study of 2D vertical double- gate MOSFET (VDGM) with an excellent short channel effect (SCE) characteristics. With the gate length of 50 nm, body doping of 3.5 times 1018 cm-3 and oxide thickness, TOX = 2.5 nm, a good drive current ION of 7 muA/mum and a low off-state leakage current IOFF of 2 pA/mum was explicitly shown. Besides that, the subthreshold characteristics also highlighted a reasonably well-controlled SCE with subthreshold swing SubVT = 89 mV/decade and threshold voltage VT = 0.56 V. The analysis of body doping effects for SCE optimization and drive current trade-off was also done for an overall investigation and limit of the VDGM. 2006-12 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/7497/1/Razali_Ismail_2006_Design_and_Simulation_of_50_nm.pdf Saad, Ismail and Ismail, Razali (2006) Design and simulation of 50 nm vertical double-gate MOSFET (VDGM). In: Semiconductor Electronics, 2006. ICSE '06. IEEE International Conference, 29 Oct 2006-1 Dec 2006, Kuala Lumpur, Malaysia. http://dx.doi.org/10.1109/SMELEC.2006.380691 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering Saad, Ismail Ismail, Razali Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) |
| title | Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) |
| title_full | Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) |
| title_fullStr | Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) |
| title_full_unstemmed | Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) |
| title_short | Design and simulation of 50 nm vertical double-gate MOSFET (VDGM) |
| title_sort | design and simulation of 50 nm vertical double-gate mosfet (vdgm) |
| topic | TK Electrical engineering. Electronics Nuclear engineering |
| url | http://eprints.utm.my/7497/ http://eprints.utm.my/7497/ http://eprints.utm.my/7497/1/Razali_Ismail_2006_Design_and_Simulation_of_50_nm.pdf |