Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

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Device design consideration for nanoscale MOSFET using semiconductor TCAD tools

The evolution of metal-oxide-semiconductor field effect transistor (MOSFET) technology has been governed mainly by device scaling over the past twenty years. One of the key questions concerning future ULSI technology is whether MOSFET devices can be scaled to 100 nmchannel length and beyond for cont...

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Bibliographic Details
Main Authors:	Teoh, Chin Hong, Ismail, Razali
Format:	Conference or Workshop Item
Language:	English
Published:	2006
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7496/ http://eprints.utm.my/7496/1/Razali_Ismail_2006_Device_Design_Consideration_for_Nanoscale.pdf

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