Characterization of strained silicon MOSFET using semiconductor TCAD tools

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Characterization of strained silicon MOSFET using semiconductor TCAD tools

The paper is looking into the enhancement of conventional PMOS by incorporating a strained silicon within the channel and bulk of semiconductor. A detailed 2D process simulation of strained silicon PMOS (SSPMos) and its electrical characterization was done using TCAD tool. With the oxide thickness,...

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Bibliographic Details
Main Authors:	Wong, Yah Jin, Saad, Ismail, Ismail, Razali
Format:	Conference or Workshop Item
Language:	English
Published:	2006
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/7495/ http://eprints.utm.my/7495/1/Razali_Ismail_2006_Characterization_of_Strained_Silicon_MOSFET.pdf

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