InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures
InAs/GaAs quantum dots (QDs) were grown by low pressure Metal Organic Chemical Vapor Deposition in Stranski-Krastanov growth mode. The influence of growth temperature on the QD density was investigated. Atomic Force Microscopy (AFM) was used to study the growth behaviour of the QD structure. It wa...
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| Format: | Article |
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Canadian Center of Science and Eduaction
2008
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| Online Access: | http://eprints.utm.my/6723/ |
| _version_ | 1848891335052886016 |
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| author | Muhammad, Rosnita Othaman, Zulkafli Lim, Kheng Boo Wahab, Yusuf |
| author_facet | Muhammad, Rosnita Othaman, Zulkafli Lim, Kheng Boo Wahab, Yusuf |
| author_sort | Muhammad, Rosnita |
| building | UTeM Institutional Repository |
| collection | Online Access |
| description | InAs/GaAs quantum dots (QDs) were grown by low pressure Metal Organic Chemical Vapor Deposition in Stranski-Krastanov growth mode. The influence of growth temperature on the QD density was investigated. Atomic Force Microscopy (AFM) was used to study the growth behaviour of the QD structure. It was identified that the growth temperature plays major role in determining the growth and distribution of InAs QDs due to the temperature-dependent dislocation propagation from the GaAs substrate. A high InAs on GaAs QD density 6.4 x 1010 cm-2 was obtained and this proposes a potential superiority of nanodevice operation.
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| first_indexed | 2025-11-15T20:56:20Z |
| format | Article |
| id | utm-6723 |
| institution | Universiti Teknologi Malaysia |
| institution_category | Local University |
| last_indexed | 2025-11-15T20:56:20Z |
| publishDate | 2008 |
| publisher | Canadian Center of Science and Eduaction |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | utm-67232017-10-22T03:59:19Z http://eprints.utm.my/6723/ InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures Muhammad, Rosnita Othaman, Zulkafli Lim, Kheng Boo Wahab, Yusuf TK Electrical engineering. Electronics Nuclear engineering QC Physics InAs/GaAs quantum dots (QDs) were grown by low pressure Metal Organic Chemical Vapor Deposition in Stranski-Krastanov growth mode. The influence of growth temperature on the QD density was investigated. Atomic Force Microscopy (AFM) was used to study the growth behaviour of the QD structure. It was identified that the growth temperature plays major role in determining the growth and distribution of InAs QDs due to the temperature-dependent dislocation propagation from the GaAs substrate. A high InAs on GaAs QD density 6.4 x 1010 cm-2 was obtained and this proposes a potential superiority of nanodevice operation. Canadian Center of Science and Eduaction 2008-05 Article PeerReviewed Muhammad, Rosnita and Othaman, Zulkafli and Lim, Kheng Boo and Wahab, Yusuf (2008) InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures. Modern applied science, 2 (3). pp. 70-74. ISSN 1913-1844 http://dx.doi.org/10.5539/mas.v2n3p70 |
| spellingShingle | TK Electrical engineering. Electronics Nuclear engineering QC Physics Muhammad, Rosnita Othaman, Zulkafli Lim, Kheng Boo Wahab, Yusuf InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures |
| title | InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures |
| title_full | InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures |
| title_fullStr | InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures |
| title_full_unstemmed | InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures |
| title_short | InAs/GaAs quantum dots grown by metal organic chemical vapor deposition at different temperatures |
| title_sort | inas/gaas quantum dots grown by metal organic chemical vapor deposition at different temperatures |
| topic | TK Electrical engineering. Electronics Nuclear engineering QC Physics |
| url | http://eprints.utm.my/6723/ http://eprints.utm.my/6723/ |