Simulation of single electron transistor (SET) circuits using Monte Carlo method

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Simulation of single electron transistor (SET) circuits using Monte Carlo method

The very fast switching characteristics and very low power consumption have given the single electron transistor (SET) promising capabilities to replace CMOS transistors in some semiconductor applications. SET theory of operation is now well established nevertheless the transistor is still under lab...

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Bibliographic Details
Main Author:	Ahmad, Syabani
Format:	Thesis
Language:	English
Published:	2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/6425/ http://eprints.utm.my/6425/1/SyabaniAhmadMFKE2007.pdf

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