Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept

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Modeling and analysis of ballistic carbon nanotube field effect transistor (CNTFET) with quantum transport concept

Aggressive scaling of CMOS has led to higher and higher integration density, the higher performance of devices, low power consumption and more complex function. However, it will eventually reach its limit in future. As device sizes approach the nanoscale, new opportunities arise from harnessing the...

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Bibliographic Details
Main Author:	Heng, Chin Chuan
Format:	Thesis
Language:	English
Published:	2007
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/6103/ http://eprints.utm.my/6103/1/HengChinChuanMFKE2007.pdf

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