Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)

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Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)

An investigation of the structural properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by plasma enhanced chemical vapour deposition of silane (SiH4) was done using a combination of atomic force microscopy (AFM), photoluminescence, infrared and UV spectroscopy. Films were prepa...

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Bibliographic Details
Main Author:	Anthony Hasbi, Hasbullah
Format:	Thesis
Language:	English
Published:	2005
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/5093/ http://eprints.utm.my/5093/1/HasbullahAnthonyHasbiMFS2005.pdf

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