Modeling the effect of velocity saturation in nanoscale MOSFET

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Modeling the effect of velocity saturation in nanoscale MOSFET

MOSFET scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Mooreâ€™s Law. The introduction of 65 nm and 90 nm process technology offer low power, high-density and highspeed generation of processor with latest technological advancement....

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Bibliographic Details
Main Author:	Tan, Michael Loong Peng
Format:	Thesis
Language:	English
Published:	2006
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/4593/ http://eprints.utm.my/4593/1/MichaelTanLoongPengMFKE2006.pdf

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